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IXYH120N65A5 - IGBT

Key Features

  • Optimized for Low Frequency High Current Switching.
  • High Surge Current Capability.
  • Square RBSOA.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XPTTM 650V GenX5TM IGBT IXYH120N65A5 Extreme Light Punch Through IGBT for up to 10kHz Switching VCES = I = C110 V  CE(sat) tfi(typ) = 650V 120A 1.35V 160ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM T stg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 290 A 160 A 120 A 790 A ICM = 240 A  VCE VCES 830 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 1.13 / 10 6 Nm/lb.