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IXYH120N65B3 - IGBT

Key Features

  • Optimized for 10-30kHz Switching.
  • Square RBSOA.
  • Avalanche Rated.
  • Short Circuit Capability.
  • High Current Handling Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 10-30kHz Switching IXYH120N65B3 VCES = 650V IC110 = 120A VCE(sat)  1.90V tfi(typ) = 107ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load VGE = 15V, VCE = 400V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.