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IXYH16N170C - High Voltage IGBT

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IXYS

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IXYH16N170C High Voltage IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYH16N170C

Datasheet Details

Part number	IXYH16N170C
Manufacturer	IXYS
File Size	219.69 KB
Description	High Voltage IGBT
Datasheet	IXYH16N170C Datasheet
Additional preview pages of the IXYH16N170C datasheet.

Product details

Features

High Voltage Package.
High Blocking Voltage.
Low Saturation Voltage Advantages.
Low Gate Drive Requirement.
High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 16A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 25 A 2 mA 100 nA 3.2 3.8.

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Published: Feb 9, 2025 |