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IXYH16N170CV1 - High Voltage IGBT

Features

  • High Voltage Package.
  • High Blocking Voltage.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V VCE = 0.8.
  • VCES, VGE = 0V, TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 16A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1700 V 3.0 5.0 V 25 A.

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High Voltage XPTTM IGBT w/ Diode Advance Technical Information IXYH16N170CV1 VCES = 1700V IC110 = 16A V CE(sat)  3.8V tfi(typ) = 120ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1700 V 1700 V ±20 V ±30 V 40 A 16 A 22 A 100 A ICM = 64 A 1360 V 310 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in.
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