IXYH16N170CV1 Description
+175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g TO-247 AD G C E G = Gate E = Emitter Tab C = Collector Tab = Collector.
IXYH16N170CV1 Key Features
- High Voltage Package
- High Blocking Voltage
- Low Saturation Voltage
- Low Gate Drive Requirement
- High Power Density
- VCES, VGE = 0V, TJ = 150C