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IXYH50N65C3D1 - IGBT

Key Features

  • Optimized for 20-60kHz Switching.
  • Square RBSOA.
  • Anti-Parallel Fast Diode.
  • Avalanche Rated.
  • Short Circuit Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Extremely Rugged.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYH50N65C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 650V IC110 = 50A VCE(sat)  2.10V tfi(typ) = 26ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.