IXYH50N65C3D1 - IGBT

Datasheet Summary

Features

Optimized for 20-60kHz Switching.
Square RBSOA.
Anti-Parallel Fast Diode.
Avalanche Rated.
Short Circuit Capability.
International Standard Package Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement.

IXYS

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Datasheet Details

Part number	IXYH50N65C3D1
Manufacturer	IXYS
File Size	183.11 KB
Description	IGBT
Datasheet	IXYH50N65C3D1 Datasheet
Additional preview pages of the IXYH50N65C3D1 datasheet.

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Full PDF Text Transcription

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Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYH50N65C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 650V IC110 = 50A VCE(sat)  2.10V tfi(typ) = 26ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.

Published: Jul 21, 2016 |