IXYH55N120A4 - Ultra Low-Vsat PT IGBT

IXYS (now Littelfuse)

Key Features

Optimized for Low Conduction Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYH55N120A4 ultra low-vsat pt igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXYH55N120A4
Manufacturer	IXYS (now Littelfuse)
File Size	1.11 MB
Description	Ultra Low-Vsat PT IGBT
Datasheet	IXYH55N120A4 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IXYH50N120C3	High-Speed IGBT	IXYS Corporation
IXYH50N120C3D1	High-Speed IGBT	IXYS Corporation
IXYH20N120C3	1200V XPT GenX3 IGBTs	IXYS Corporation
IXYH82N120C3	1200V XPT IGBT	IXYS Corporation
IXYA20N120C3HV	1200V XPT GenX3 IGBTs	IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number	Description
IXYH50N65C3	IGBT
IXYH50N65C3D1	IGBT
IXYH50N65C3H1	IGBT
IXYH100N65B3	IGBT
IXYH100N65C3	IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

1200V XPTTM GenX4TM IGBT IXYH55N120A4 Ultra Low-Vsat PT IGBT for up to 5kHz Switching VCES = 1200V IC110 = 55A V  1.8V CE(sat) tfi(typ) = 270ns TO-247 (IXYH) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5 Clamped Inductive Load TC = 25°C 175 A 55 A 350 A ICM = 110 A  VCE 0.8 • VCES 650 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C Mounting Torque 1.13 / 10 Nm/lb.