IXYH75N65C3D1 - IGBT

Features

International Standard Package.
Optimized for 20-60kHz Switching.
Square RBSOA.
Avalanche Rated.
Short Circuit Capability.
High Current Handling Capability.
Anti-Parallel Fast Diode Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYH75N65C3D1 IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYH75N65C3D1

Datasheet Details

Part number	IXYH75N65C3D1
Manufacturer	IXYS (now Littelfuse)
File Size	239.86 KB
Description	IGBT
Datasheet	IXYH75N65C3D1 Datasheet
Additional preview pages of the IXYH75N65C3D1 datasheet.

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Full PDF Text Transcription

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/ Diode Extreme Light Punch through IGBT for 20-60kHz Switching IXYH75N65C3D1 VCES = 650V IC110 = 75A VCE(sat)  2.3V tfi(typ) = 60ns Symbol VCES VCGR VGES VGEM IICLR25MS IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TTeC rm=in2a5l°CCu(rCrehnipt Capability) Limit TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.

Published: Jul 21, 2016 |