IXYH85N120A4 - Ultra Low-Vsat PT IGBT

IXYS (now Littelfuse)

Key Features

Optimized for Low Conduction Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYH85N120A4 ultra low-vsat pt igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXYH85N120A4
Manufacturer	IXYS (now Littelfuse)
File Size	1.11 MB
Description	Ultra Low-Vsat PT IGBT
Datasheet	IXYH85N120A4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYH85N120A4 VCES = 1200V IC110 = 85A V  1.8V CE(sat) tfi(typ) = 280ns TO-247 (IXYH) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5 Clamped Inductive Load TC = 25°C 300 A 160 A 85 A 520 A ICM = 170 A  VCE 0.8 • VCES 1150 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C Mounting Torque 1.13 / 10 Nm/lb.