IXYH85N120A4 - Ultra Low-Vsat PT IGBT

Datasheet Summary

Features

Optimized for Low Conduction Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS

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Datasheet Details

Part number	IXYH85N120A4
Manufacturer	IXYS
File Size	1.11 MB
Description	Ultra Low-Vsat PT IGBT
Datasheet	IXYH85N120A4 Datasheet
Additional preview pages of the IXYH85N120A4 datasheet.

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Full PDF Text Transcription

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1200V XPTTM GenX4TM IGBT Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYH85N120A4 VCES = 1200V IC110 = 85A V  1.8V CE(sat) tfi(typ) = 280ns TO-247 (IXYH) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5 Clamped Inductive Load TC = 25°C 300 A 160 A 85 A 520 A ICM = 170 A  VCE 0.8 • VCES 1150 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C Mounting Torque 1.13 / 10 Nm/lb.

Published: Feb 11, 2025 |