IXYH85N120C4 - High Speed Through IGBT

IXYS (now Littelfuse)

Key Features

Optimized for Low Switching Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYH85N120C4 high speed through igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXYH85N120C4
Manufacturer	IXYS (now Littelfuse)
File Size	1.16 MB
Description	High Speed Through IGBT
Datasheet	IXYH85N120C4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

1200V XPTTM Gen 4 IGBT High Speed Through IGBT for 20-50kHz Switching IXYH85N120C4 VCES = 1200V I = 85A C110 V  2.50V CE(sat) tfi(typ) = 37ns Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM T stg TL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC= 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C 240 A 160 A 85 A 420 A ICM = 170 A  VCE 0.8 • VCES 1150 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C Mounting Torque 1.13 / 10 Nm/lb.