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IXYK120N120B3 - IGBT

Features

  • Square RBSOA.
  • International Standard Packages.
  • Positive Thermal Coefficient of Vce(sat).
  • Avalanche Rated.
  • High Current Handling Capability Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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1200V XPTTM IGBT GenX3TM High-Speed IGBT for 10-30 kHz Switching Advance Technical Information IXYK120N120B3 IXYX120N120B3 VCES = 1200V IC110 = 120A VCE(sat)  2.2V tfi(typ) = 260ns TO-264P (IXYK) Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 1 Clamped Inductive Load TC = 25°C 320 160 120 800 60 2 ICM = 240 VCE VCES 1500 -55 ... +175 175 -55 ... +175 A A A A A J A W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.
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