IXYX110N120A4 - Ultra Low-Vsat PT IGBT

Product Overview

IXYS

Part number	IXYX110N120A4
Manufacturer	IXYS
File Size	610.22 KB
Description	Ultra Low-Vsat PT IGBT
Datasheet	IXYX110N120A4 Datasheet
Additional preview pages of the IXYX110N120A4 datasheet.

Optimized for Low Conduction Losses.
Positive Thermal Coefficient of Vce(sat).
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 3mA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = IC110, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 1200 V 4.5 6.5 V.

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Published: Feb 10, 2025 |