Datasheet4U Logo Datasheet4U.com

IXYX110N120B4 - 1200V IGBT

Features

  • Optimized for 5-30kHZ Switching.
  • Positive Thermal Coefficient of Vce(sat).
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

📥 Download Datasheet

Datasheet preview – IXYX110N120B4

Datasheet Details

Part number IXYX110N120B4
Manufacturer IXYS
File Size 1.17 MB
Description 1200V IGBT
Datasheet download datasheet IXYX110N120B4 Datasheet
Additional preview pages of the IXYX110N120B4 datasheet.
Other Datasheets by IXYS

Full PDF Text Transcription

Click to expand full text
1200V XPTTM Gen 4 IGBT IXYX110N120B4 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = 1200V I = 110A C110 V  2.10V CE(sat) tfi(typ) = 130ns Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM SSOA (RBSOA) PC T J TJM Tstg TL Md Weight Test Conditions Maximum Ratings T = 25°C to 175°C J T J = 25°C to 175°C, R GE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Terminal Current Limit T = 110°C C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C 340 A 160 A 110 A 800 A ICM = 220 A 0.8 • V V CES 1360 W -55 ... +175 °C 175 °C -55 ... +175 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s 300 °C Mounting Force 20..120 / 4.5..
Published: |