MCB30P1200LB Description
SiC Power MOSFET MCB30P1200LB ID25 = 38 A VDSS = 1200 V R = DS(on) max 52 mΩ Part number MCB30P1200LB 7 T1 4 9 8 7 Itsoohlaeteadtsisnukrface 654 321 E72873 5 9 T2 3.
MCB30P1200LB Key Features
- High speed switching with low capacitances
- High blocking voltage with low RDS(on)
- Easy to parallel and simple to drive
- Resistant to latch-up
- Real Kelvin source connection