MCB60I1200TZ Description
SiC Power MOSFET Single MOSFET Part number MCB60I1200TZ D (4) G (1) S (3) MCB60I1200TZ ID25 = 90 A VDSS = 1200 V R = DS(on) max 34 mΩ G S D Backside: Drain.
MCB60I1200TZ Key Features
- High speed switching with low capacitances
- High blocking voltage with low RDS(on)
- Easy to parallel and simple to drive
- Avalanche ruggedness
- Resistant to latch-up