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MCB60I1200TZ - SiC Power MOSFET

Key Features

  • / Advantages:.
  • High speed switching with low capacitances.
  • High blocking voltage with low RDS(on).
  • Easy to parallel and simple to drive.
  • Avalanche ruggedness.
  • Resistant to latch-up.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiC Power MOSFET Single MOSFET Part number MCB60I1200TZ D (4) G (1) S (3) MCB60I1200TZ ID25 = 90 A VDSS = 1200 V R = DS(on) max 34 mΩ G S D Backside: Drain tentative Features / Advantages: • High speed switching with low capacitances • High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Avalanche ruggedness • Resistant to latch-up Applications: • Solar inverters • High voltage DC/DC converters • Motor drives • Switch mode power supplies • UPS • Battery chargers • Induction heating Package: TO-268AA (D3Pak-HV) • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • High creepage distance between terminals Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff