MCB60I1200TZ - SiC Power MOSFET

Datasheet Summary

Features

/ Advantages:.
High speed switching with low capacitances.
High blocking voltage with low RDS(on).
Easy to parallel and simple to drive.
Avalanche ruggedness.
Resistant to latch-up.

IXYS

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Datasheet Details

Part number	MCB60I1200TZ
Manufacturer	IXYS
File Size	218.42 KB
Description	SiC Power MOSFET
Datasheet	MCB60I1200TZ Datasheet
Additional preview pages of the MCB60I1200TZ datasheet.

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Full PDF Text Transcription

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SiC Power MOSFET Single MOSFET Part number MCB60I1200TZ D (4) G (1) S (3) MCB60I1200TZ ID25 = 90 A VDSS = 1200 V R = DS(on) max 34 mΩ G S D Backside: Drain tentative Features / Advantages: • High speed switching with low capacitances • High blocking voltage with low RDS(on) • Easy to parallel and simple to drive • Avalanche ruggedness • Resistant to latch-up Applications: • Solar inverters • High voltage DC/DC converters • Motor drives • Switch mode power supplies • UPS • Battery chargers • Induction heating Package: TO-268AA (D3Pak-HV) • Industry standard outline • RoHS compliant • Epoxy meets UL 94V-0 • High creepage distance between terminals Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff

Published: Dec 7, 2024 |