MIO1200-33E10 Overview
MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ. = 3.1 V CC C C' G E' EE E phase-out IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TVJ < 125°C Maximum Ratings 3300 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.
MIO1200-33E10 Key Features
- NPT³ IGBT
- Low-loss
- Smooth switching waveforms for good EMC
- Industry standard package
- High power density
- AISiC base-plate for high power cycling capacity
- AIN substrate for low thermal resistance
MIO1200-33E10 Applications
- AC power converters for