MIO1200-33E10 Datasheet IGBT Module

Manufacturer: IXYS (now Littelfuse)

MIO1200-33E10 igbt module by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	MIO1200-33E10
Manufacturer	IXYS (now Littelfuse)
File Size	197.97 KB
Description	IGBT Module
Datasheet	MIO1200-33E10 Datasheet

Overview

MIO 1200-33E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ.

= 3.1 V CC C C' G E' EE E phase-out IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 3300 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.

typ.

Key Features

NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC.
Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical.

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