MIO1200-33E11 Description
Advanced Technical Information MIO 1200-33E11 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 3300 V VCE(sat) typ. TVJ < 125°C Maximum Ratings 3300 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. TVJ = 25°C TVJ = 125°C VGE(th) IC = 240 mA;.
MIO1200-33E11 Key Features
- NPT³ IGBT
- Low-loss
- Smooth switching waveforms for good EMC
- Industry standard package
- High power density
- AISiC base-plate for high power cycling capacity
- AIN substrate for low thermal resistance
MIO1200-33E11 Applications
- AC power converters for