MMIX1F230N20T Description
+175 C 300 C 260 C 2500 V~ 50..200 / 11..45 8 N/lb. g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min.
MMIX1F230N20T Key Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Substrate
- Excellent Thermal Transfer
- Increased Temperature and Power Cycling Capability
- High Isolation Voltage (2500V~)
- 175°C Operating Temperature
- Very High Current Handling
- Fast Intrinsic Diode
- Avalanche Rated
- Very Low RDS(on)