MMIX1F44N100Q3 Overview
Key Features
- Isolated Substrate
- Excellent Thermal Transfer
- Increased Temperature and Power Cycling Capability
- High Isolation Voltage (2500V~)
- Low Intrinsic Gate Resistance
- Low Package Inductance
- Fast Intrinsic Rectifier
- Low RDS(on) and QG
- High Power Density Easy to Mount Space Savings ±200 nA 50 μA 3 mA 245 mΩ z
- VDSS, ID = 22A Gate
