IXFH320N10T2 Description
+175 °C 300 °C 260 °C 1.13 / 10 6 4 Nm/lb.in. g g Characteristic Values Min. 100 V 2.0 4.0 V ±200 nA 25 μA 1.75 mA 3.5 mΩ G DS D (Tab) TO-268 (IXFT) G S D (Tab) G = Gate D = Drain S = Source Tab = Drain.
IXFH320N10T2 is Power MOSFET manufactured by IXYS .
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXFH320N10T2 | N-Channel MOSFET |
+175 °C 300 °C 260 °C 1.13 / 10 6 4 Nm/lb.in. g g Characteristic Values Min. 100 V 2.0 4.0 V ±200 nA 25 μA 1.75 mA 3.5 mΩ G DS D (Tab) TO-268 (IXFT) G S D (Tab) G = Gate D = Drain S = Source Tab = Drain.