IXFH320N10T2 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXFH320N10T2 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ

(10 views)

TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on)

(6 views)