IXGH20N60 Description
+150 °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Symbol BV CES VGE(th) ICES I GES V CE(sat) Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min.
IXGH20N60 Key Features
- for low on-state conduction losses l High current handling capability l MOS Gate turn-on
- drive simplicity l Voltage rating guaranteed at high