IXKC13N80C Description
Advanced Technical Information IXKC 13N80C CoolMOS™ 1) Power MOSFET ISOPLUS™ Package N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface D G S ID25 = 13 A VDSS = 800 V RDS(on) max = 290 mΩ ISOPLUS220™ G D S E72873.
IXKC13N80C Key Features
- Silicon chip on Direct-Copper-Bond substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- 3rd generation CoolMOS™ 1) power
- high blocking capability
- lowest resistance
- o VGS = ± 20 V; VDS = 0 V
- avalanche rated for unclamped inductive switching (UIS)
- Low thermal resistance due to reduced chip thickness