IXKC20N60C Description
TC = 25°C Maximum Ratings 600 V ± 20 V 15 A 10.5 A 690 mJ 1 mJ Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. VDS = 25 V f = 1 MHz TVJ = 25°C TVJ = 150°C VGS = 0 to 10.
IXKC20N60C Key Features
- Silicon chip on Direct-Copper-Bond substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
- CoolMOS™ 1) power MOSFET
- 3rd generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped inductive switching (UIS)