IXKC20N60C Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 190mΩ@VGS=10V ·100% avalanche tested

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IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS

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