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Preliminary Data Sheet
ICE11N65FP ICE11N65FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems
HALOGEN
Product Summary ID V(BR)DSS rDS(on)
FREE
TA=25oC ID=250uA VGS=10V VDS=480V
D
11A 650V 0.25 59nC
Max Min Typ Typ
Qg
G S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
ICE11N65FP Datasheet
