ICE11N65FP Description
TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source.
ICE11N65FP Key Features
- 55 to +150 50
- 0.25 0.28
- RGS Gate Resistance
- °C/W °C
- 600 -5- 15
- nC VDS = 480V, ID = 11A, VGS = 0 to 10V
- 0.9 1.2
- V VGS = 0V, IS = IF ns