Datasheet Summary
Preliminary Data Sheet
ICE11N70 ICE11N70 N-Channel
Enhancement Mode MOSFET
Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
HALOGEN
Product Summary ID V(BR)DSS rDS(on)
FREE
TA=25oC ID=250uA VGS=10V VDS=480V
11A 700V 0.20Ω 85nC
Max Min Typ Typ
Qg
G S T0220 Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source.
ICEMOS AND ITS SISTER PANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO...
