ICE11N70 Description
Preliminary Data Sheet ICE11N70 ICE11N70 N-Channel Enhancement Mode MOSFET.
ICE11N70 Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
- Specifications subject to change
- 740 3 0.1 0.20 0.53 4.3
- 2750 980 25 19 39 3.5 55 7