• Part: ICE11N70
  • Manufacturer: Micross
  • Size: 719.64 KB
Download ICE11N70 Datasheet PDF
ICE11N70 page 2
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ICE11N70 Description

G TO-220 Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source.

ICE11N70 Key Features

  • 55 to +150 60
  • 0.20 0.25
  • RGS Gate Resistance
  • °C/W °C
  • 0.9 1.2
  • 440 -8- 35
  • V VGS = 0V, IS = IF ns