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ICE15N73 - N-Channel MOSFET

Features

  • Low rDS(on).
  • Ultra Low Gate Charge Qg VDS=480V 82nC D Typ.
  • High dv/dt capability.
  • High Unclamped Inductive Switching (UIS) capability.
  • High peak current capability.
  • Increased transconductance performance G.
  • Optimized design for high performance power systems S T0220 ICEMOS AND ITS SISTER.

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Datasheet preview – ICE15N73

Datasheet Details

Part number ICE15N73
Manufacturer Icemos
File Size 760.60 KB
Description N-Channel MOSFET
Datasheet download datasheet ICE15N73 Datasheet
Additional preview pages of the ICE15N73 datasheet.

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Full PDF Text Transcription

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Preliminary Data Sheet ICE15N73 ICE15N73 N-Channel Enhancement Mode MOSFET ID V(BR)DSS Product Summary TA=25oC ID=250uA 15A 730V Max Min rDS(on) VGS=10V 0.25Ω Typ Features • Low rDS(on) • Ultra Low Gate Charge Qg VDS=480V 82nC D Typ • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance G • Optimized design for high performance power systems S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source.
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