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ICE15N73FP - N-Channel MOSFET

Features

  • Low rDS(on).
  • Ultra Low Gate Charge.
  • High dv/dt capability.
  • High Unclamped Inductive Switching (UIS) capability.
  • High peak current capability.
  • Increased transconductance performance.
  • Optimized design for high performance power systems.

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Datasheet preview – ICE15N73FP

Datasheet Details

Part number ICE15N73FP
Manufacturer Icemos
File Size 847.57 KB
Description N-Channel MOSFET
Datasheet download datasheet ICE15N73FP Datasheet
Additional preview pages of the ICE15N73FP datasheet.

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Full PDF Text Transcription

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Preliminary Data Sheet ICE15N73FP ICE15N73FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN FREE ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 15A 730V 0.25Ω 82nC D G S Max Min Typ Typ ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
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