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Preliminary Data Sheet
ICE20N65 ICE20N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems
HALOGEN
Product Summary ID rDS(on)
FREE
TA=25oC VGS=10V VDS=480V
D
20A 700V 0.17Ω 82nC
Max Min Typ Typ
BVDSS @Tjmax ID=250uA Qg
G S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal Heatsink
1=Gate, 2=Drain, 3=Source.
ICE20N65 Datasheet
