ICE20N65FP Overview
TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source.
ICE20N65FP Key Features
- 55 to +150 50
- Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
- IGSS RDS(on)
- RGS Gate Resistance
- 943 -8- 23
- 10 -5- 67
- pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2-ID- RDS, ID = 10A
- 1.0 1.2
- 423 -8- 34
- V VGS = 0V, IS = IF ns
