Datasheet Summary
Preliminary Data Sheet
ICE47N65W ICE47N65W N-Channel
Enhancement Mode MOSFET
Features
- TO247 package
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
HALOGEN
Product Summary ID V(BR)DSS rDS(on)
FREE
TA=25oC ID=1mA VGS=10V VDS=480V
47A 650V 0.063Ω 187nC
Max Min Typ Typ
Qg
ICEMOS AND ITS SISTER PANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA,...
