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ICE47N65W - N-Channel Enhancement Mode MOSFET

Features

  • TO247 package.
  • Low rDS(on).
  • Ultra Low Gate Charge.
  • High dv/dt capability.
  • High Unclamped Inductive Switching (UIS) capability.
  • High peak current capability.
  • Increased transconductance performance.
  • Optimized design for high performance power systems.

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Datasheet preview – ICE47N65W

Datasheet Details

Part number ICE47N65W
Manufacturer Icemos
File Size 698.11 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ICE47N65W Datasheet
Additional preview pages of the ICE47N65W datasheet.

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Full PDF Text Transcription

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Preliminary Data Sheet ICE47N65W ICE47N65W N-Channel Enhancement Mode MOSFET Features • TO247 package • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=1mA VGS=10V VDS=480V D 47A 650V 0.063Ω 187nC Max Min Typ Typ Qg G S ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
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