ICE47N65W Description
TO-247 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source.
ICE47N65W Key Features
- 55 to +150 60
- Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
- IGSS RDS(on)
- RGS Gate Resistance
- 0.063 0.17
- °C/W °C
- pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2-ID- RDS, ID = 24A
- nC VDS = 480V, ID = 47A, VGS = 0 to 10V
- 0.95 1.2
- V VGS = 0V, IS = IF ns