ICE60N150FP Description
Preliminary Data Sheet ICE60N150FP ICE60N150FP N-Channel Enhancement Mode MOSFET.
ICE60N150FP Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Optimized design for hard switching SMPS topologies
- Specifications subject to change
- 2750 980 25 2740 87 25 10 5 67 4.5