Datasheet4U Logo Datasheet4U.com

ICE60N150FP - N-Channel MOSFET

Description

TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operatin

Features

  • r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 25A 650V 0.13Ω 85nC Pin.

📥 Download Datasheet

Datasheet preview – ICE60N150FP

Datasheet Details

Part number ICE60N150FP
Manufacturer Micross Components
File Size 715.98 KB
Description N-Channel MOSFET
Datasheet download datasheet ICE60N150FP Datasheet
Additional preview pages of the ICE60N150FP datasheet.

📁 Similar Datasheet

  • ICE60N150FP - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N150 - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N130 - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N130FP - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N160B - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N600D - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE60N800D - N-Channel Enhancement Mode MOSFET (Icemos)
  • iCE65L04 - Ultra Low-Power FPGA Known Good Die (SiliconBlue)
  • ICE6N70 - N-Channel Enhancement Mode MOSFET (Icemos)
  • ICE6N70FP - N-Channel Enhancement Mode MOSFET (Icemos)
Other Datasheets by Micross Components

Full PDF Text Transcription

Click to expand full text
ICE60N150FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 25A 650V 0.
Published: |