ICE60N150FP Description
TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source.
ICE60N150FP Key Features
- 55 to +150 50
- 0.13 0.15
- RGS Gate Resistance
- 10 -5- 67
- VGS = 0V, VDS = 25V, f = 1 MHz pF
- 1.0 1.2
- 440 -8- 35
- V VGS = 0V, IS = IF ns