ICE60N800D Description
Preliminary Data Sheet ICE60N800D ICE60N800D N-Channel Enhancement Mode MOSFET.
ICE60N800D Key Features
- Low rDS(on)
- Ultra Low Gate Charge
- High dv/dt capability
- High Unclamped Inductive Switching (UIS) capability
- High peak current capability
- Increased transconductance performance
- Optimized design for high performance power systems
- Specifications subject to change
- 0. 65 1.7 6
- 635 365