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ICE60N800D

Manufacturer: Micross
ICE60N800D datasheet preview

Datasheet Details

Part number ICE60N800D
Datasheet ICE60N800D-MicrossComponentspdf
File Size 707.34 KB
Manufacturer Micross
Description N-Channel MOSFET
ICE60N800D page 2 ICE60N800D page 3

ICE60N800D Overview

TO-252 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source.

ICE60N800D Key Features

  • 55 to +150 60
  • 0.65 0.8
  • RGS Gate Resistance
  • 365 -6-7-6- 3.5
  • nC VDS = 480V, ID = 5A, VGS = 0 to 10V
  • 0.9 1.2
  • V VGS = 0V, IS = IF ns

ICE60N800D from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Icemos Logo ICE60N800D N-Channel Enhancement Mode MOSFET Icemos
Micross logo - Manufacturer

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