¡¤ With TO-3PFa package ¡¤ Low collector saturation voltage ¡¤ High breakdown voltage APPLICATIONS ¡¤ For high speed switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
¡¤
Absolute maximum ratings(Ta=25¡æ )
SYMBOL VCBO VCEO VEBO IC ICM IB
Collector-base voltage
PARAM
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3210
DESCRIPTION ¡¤ With TO-3PFa package ¡¤ Low collector saturation voltage ¡¤ High breakdown voltage APPLICATIONS ¡¤ For high speed switching applications
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
¡¤
Absolute maximum ratings(Ta=25¡æ )
SYMBOL VCBO VCEO VEBO IC ICM IB
Collector-base voltage
PARAMETER
A H C IN
Collector current Base current
Collector-emitter voltage
Emitter-base voltage
S E NG
Open emitter
Open base
C I M E
CONDITIONS
OND
R O T UC
VALUE 500 400 7 10 20 5
UNIT V V V A A A
Open collector
Collector current-peak
TC=25¡æ PC Collector power dissipation Ta=25¡æ Tj Tstg Junction temperature Storage temperature
100 W 3 150 -55~150 ¡æ ¡æ
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C2310 Datasheet
