17N60 - N-Channel Mosfet Transistor

Datasheet Summary

Features

Drain Current ID= 17A@ TC=25℃.
Drain Source Voltage : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max).
Fast Switching.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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Datasheet Details

Part number	17N60
Manufacturer	Inchange Semiconductor
File Size	211.60 KB
Description	N-Channel Mosfet Transistor
Datasheet	17N60 Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 17 A IDM Drain Current-Single Plused 68 A PD Total Dissipation @TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.5 ℃/W 17N60 isc website：www.

Published: Jul 14, 2016 |