17N60 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance :

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PD - 95629 www.datasheet4u.com IRFB17N60KPbF • Lead-Free www.irf.com 1 8/4/04 IRFB17N60KPbF www.datasheet4u.com 2 www.irf.com IRFB17N60KPbF w

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PD - 94578 www.datasheet4u.com IRFB17N60K SMPS MOSFET HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Su

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ICE17N60FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switchi

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Preliminary Data Sheet ICE17N60FP ICE17N60FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability

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PD - 94578 www.datasheet4u.com IRFB17N60K SMPS MOSFET HEXFET® Power MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Su

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IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY 600 VGS = 10 V 99 32 47 Single D FEATURES • Smaller TO-220 Package 0.35 www.d

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ICE17N60 N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching

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UNISONIC TECHNOLOGIES CO., LTD 17N60-ML 17A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 17N60-ML is a high voltage power MOSFET combines advanc

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SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg (Max.) (nC) Qgs (nC

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Preliminary Data Sheet ICE17N60 ICE17N60 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • H

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FMR17N60ES Super FAP-E3S series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features Maintains both low power loss and low noise Lower RDS(on)

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www.DataSheet.co.kr FMH17N60ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

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www.DataSheet.co.kr FMV17N60ES Super FAP-E3S series Features Maintains both low power loss and low noise Lower RDS (on) characteristic More controlla

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FDPF17N60NT — N-Channel UniFETTM II MOSFET FDPF17N60NT N-Channel UniFETTM II MOSFET 600 V, 17 A, 340 mΩ Features • RDS(on) = 290 mΩ (Typ.) @ VGS = 10

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MOSFET – N-Channel, UniFETE II 600 V, 17 A, 340 mW FDPF17N60NT Description UniFET II MOSFET is onsemi’s high voltage MOSFET family based on advanced p

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IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 9

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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