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SiHFB17N60K - Power MOSFET

Key Features

  • 600 0.35.
  • Smaller TO-220 Package.
  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS.

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Full PDF Text Transcription for SiHFB17N60K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFB17N60K. For precise diagrams, and layout, please refer to the original PDF.

IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 99 32 47 Single D FEAT...

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(nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 99 32 47 Single D FEATURES 600 0.35 • Smaller TO-220 Package • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT www.DataSheet4U.

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