SiHFB17N50L Datasheet | Vishay

FEATURES - Low Gate Charge Qg results in Simple Drive Requirement - Improved Gate, Avalanche and Dynamic d V/dt Ruggedness Available Ro HS- PLIANT - Fully Characterized Capacitance and Avalanche Voltage and Current - Low trr and Soft Diode Recovery - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply - High Speed Power Switching - ZVS and High Frequency Circuit - PWM Inverters TO-220AB IRFB17N50LPb F Si HFB17N50L-E3 IRFB17N50L Si HFB17N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 3.0 m H, Rg = 25 , IAS = 16 A (see fig. 12). c. ISD  16 A, d I/dt  347 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 500 ± 30 16 11 64 1.8 390 16 22 220 13 - 55 to + 150 300d 10 1.1 UNIT...