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SiHFB17N50L - Power MOSFET

Key Features

  • Low Gate Charge Qg results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS.

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Full PDF Text Transcription for SiHFB17N50L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFB17N50L. For precise diagrams, and layout, please refer to the original PDF.

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 130 33 59 Single 0...

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(nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 130 33 59 Single 0.

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