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SiHFB11N50A - Power MOSFET

Key Features

  • 500 0.52.
  • Low Gate Charge Qg Results in Simple Drive Requirement.
  • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness.
  • Fully Characterized Capacitance and Avalanche Voltage and current.
  • Lead (Pb)-free Available Available RoHS.

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Full PDF Text Transcription for SiHFB11N50A (Reference)

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IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 52 13 18 Single D FEAT...

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(nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 52 13 18 Single D FEATURES 500 0.52 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current • Lead (Pb)-free Available Available RoHS* COMPLIANT www.DataSheet4U.

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