SiHFB11N50A Datasheet | Vishay

FEATURES 500 0.52 - Low Gate Charge Qg Results in Simple Drive Requirement - Improved Gate, Avalanche and Dynamic d V/dt Ruggedness - Fully Characterized Capacitance and Avalanche Voltage and current - Lead (Pb)-free Available Available Ro HS- PLIANT .. APPLICATIONS - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply - High Speed Power Switching TO-220 APPLICABLE OFF LINE SMPS TOPOLOGIES S G D S N-Channel MOSFET - Two Transistor Forward - Half and Full Bridge - Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 IRFB11N50APb F Si HFB11N50A-E3 IRFB11N50A Si HFB11N50A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 °C EAS IAR EAR PD d V/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 11 7.0 44 1.3 275 11 17 170 6.9 - 55 to + 150 300d 10 1.1 W/°C m J A m J W V/ns °C lbf - in N- m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 4.5 m H, RG = 25 Ω, IAS = 11 A (see fig. 12). c. ISD ≤ 11 A, d I/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91094 S-81243-Rev. B, 21-Jul-08 .vishay. 1 IRFB11N50A, Si HFB11N50A Vishay Siliconix THERMAL RESISTANCE PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL Rth JA Rth CS Rth JC TYP. 0.50 MAX. 62 0.75 °C/W UNIT SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static SYMBOL TEST CONDITIONS...