SiHFB13N50A Datasheet | Vishay

FEATURES - Lower Gate Charge Qg Results in Simpler Drive Reqirements Available - Improved Gate, Avalanche and Dynamic d V/dt Available Ruggedness - Fully Characterized Capacitance and Avalanche Voltage - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supplies - High Speed Power Switching TO-220AB IRFB13N50APb F Si HFB13N50A-E3 IRFB13N50A Si HFB13N50A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor TC = 25 °C VGS at 10 V TC = 100 °C Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 5.7 m H, Rg = 25 , IAS =14 A, d V/dt = 7.6 V/ns (see fig. 12a). c. ISD  14 A, d I/dt  250 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 500 ± 30 14 9.1 56 2.0 560 14 25 250 9.2 - 55 to + 150 300d 10 1.1 UNIT V W/°C m J A m J W V/ns °C lbf - in N- m - Pb containing terminations are not Ro HS pliant, exemptions may...