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SiHFB16N50K - Power MOSFET

Key Features

  • Low Gate Charge Qg Results in Simple Drive Requirement Available.
  • Improved Gate, Avalanche and Dynamic dV/dt RoHS.

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Full PDF Text Transcription for SiHFB16N50K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SiHFB16N50K. For precise diagrams, and layout, please refer to the original PDF.

IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 89 27 43 Single 0....

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(nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 89 27 43 Single 0.

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