SiHFB16N50K Datasheet | Vishay

FEATURES - Low Gate Charge Qg Results in Simple Drive Requirement Available - Improved Gate, Avalanche and Dynamic d V/dt Ro HS- PLIANT Ruggedness - Fully Characterized Capacitance and Avalanche Voltage and Current - Low RDS(on) - Lead (Pb)-free Available APPLICATIONS - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply - High Speed Power Switching - Hard Switched and High Frequency Circuits TO-220 IRFB16N50KPb F Si HFB16N50K-E3 IRFB16N50K Si HFB16N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting TJ = 25 °C, L = 2.2 m H, RG = 25 Ω, IAS = 17 A. c. ISD ≤ 17 A, d I/dt ≤ 500 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91096 S09-0015-Rev. A, 19-Jan-09 LIMIT 500 ± 30 17 11 68 2.3 310 17 28 280 11 - 55 to + 150 300d 10...