SiHFB16N60L Datasheet | Vishay

FEATURES 600 0.385 - Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications - Lower Gate Charge Results in Simpler Drive Requirements Available Ro HS- PLIANT - Enhanced d V/dt Capabilities Offer Improved Ruggedness - Higher Gate Voltage Threshold Offers Improved Noise Immunity - Lead (Pb)-free Available TO-220 APPLICATIONS - Zero Voltage Switching SMPS - Tele and Server Power Supplies S N-Channel MOSFET - Uninterruptible Power Supplies - Motor Control Applications ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 IRFB16N60LPb F Si HFB16N60L-E3 IRFB16N60L Si HFB16N60L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg LIMIT 600 ± 30 16 10 60 2.5 310 16 31 310 10 - 55 to + 150 300d 10 1.1 UNIT V A W/°C m J A m J W V/ns °C lbf - in N- m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 2.5 m H, RG = 25 Ω, IAS =16 A, d V/dt = 10 V/ns (see fig. 12a). c. ISD ≤ 16 A, d I/dt ≤ 340 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. - Pb containing terminations are not Ro HS pliant, exemptions may apply Document Number: 91097 S-Pending-Rev. A, 03-Jun-08 .vishay. 1 WORK-IN-PROGRESS IRFB16N60L, Si HFB16N60L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SYMBOL Rth JA Rth JC TYP. MAX. 62 0.4 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER Static Drain-Source Breakdown Voltage .. VDS...