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SIHG17N60D Datasheet D Series Power MOSFET

Manufacturer: Vishay

Overview: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg (Max.

Key Features

  • 650 0.340.
  • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS).
  • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-247AC G S D G S N-Channel MOSFET.

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