SIHG17N60D Description
Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. at 25 °C () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 90 14 22 Single.
SIHG17N60D Key Features
- Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
- Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg