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FDPF17N60NT - N-Channel MOSFET

General Description

based on advanced planar stripe and DMOS technology.

state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 290 mW (Typ. ) @ VGS = 10 V, ID = 8.5 A.
  • Low Gate Charge (Typ. 48 nC).
  • Low Crss (Typ. 23 pF).
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, UniFETE II 600 V, 17 A, 340 mW FDPF17N60NT Description UniFET II MOSFET is onsemi’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on−state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate−source ESD diode allows UniFET II MOSFET to withstand over 2 kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • RDS(on) = 290 mW (Typ.) @ VGS = 10 V, ID = 8.5 A • Low Gate Charge (Typ. 48 nC) • Low Crss (Typ.