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20N06 - N-Channel MOSFET

Key Features

  • Drain Current ID= 20A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 60V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max).
  • Fast Switching.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications in power supplies ·Motor controls,high efficient DC to DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 40 W Tj Max.